Decode re-reads the KV cache every token
Llama-70B example: 80 layers, 8 KV heads, head dim ~128, 8-bit. Paper values at 8K / 32K / 128K; slider scales linearly from them.
Three memory options per card
Modeled specs from the paper. SRAM is fast but tiny, HBM is large but starved, 3D-DRAM sits between.
KV read-time floor at the chosen contextIllustrative · derived arithmetic
KV size ÷ bandwidth, KV only (weights not counted). Uses the slider above.
Stack and hierarchy
Logic die (TSMC N4P) bonded face to face under the DRAM die.
Why a 128-byte flit causes overfetch
Step through the bank arithmetic.
Pinless DBI: "stream flipping"
The memory controller inverts; the flag lives as a metadata bit in DRAM, not on a pin.
Toy bus: toggles vs. inversionIllustrative · 256-bit toy, not paper data
Orange cells toggle versus the previous flit. Slide the share of differing bits: random data (50%) barely benefits.
Energy per bit vs. switchingbench silicondashed line & 50% point = episode inference
Measured: 0.455 → 0.376 pJ/bit, read-only, burst 128, 500 MHz, 8 banks. Baseline is the 100%-switching curve.
Bank chainingIllustrative mapping
N=24 regular banks + M=2 spares (purple). Click a physical bank to fail it; muxes rebuild the window.
RowHammer vs. 4 ms refreshanalytical argument
Paper: 200,000 activations × 44 ns row cycle = 8.8 ms > 4 ms. Threshold is an older-node assumption, single aggressor.
Thermalanalytical resistor-network model, not measured
106 W per chiplet. Cooling dominates; the stack adds ~1.5%.
Throughput gain of 3D-DRAMsimulated
Compute fixed at 10 PFLOPS, batch 32 (Poisson-arrival model), minimal-card deployment. No error bars reported.
What is measured, and what is not
What to ask forfrom the episode
References
- Raptor: First 3D-DRAM Accelerator for Generative Inference Silicon
- Bus-Invert Coding for Low-Power I/O — Stan, Burleson, 1995
- Toggle-Aware Compression for GPUs — Pekhimenko et al., HPCA 2016
- Fine-Grained DRAM — O'Connor et al., MICRO 2017
- Input-Dependent Power Usage in GPUs — Gregersen, Patel, Choukse, 2024
- Flipping Bits in Memory Without Accessing Them — Kim et al., 2014
- RAIDR: Retention-Aware Intelligent DRAM Refresh — Liu et al., 2012
- HMC / HBM3 energy-per-bit disclosures — JEDEC, Micron, 2022-2025
- MegaScale-Infer — Zhu et al., 2025
- Stratum — Pan et al., 2025
- H2-LLM — Li et al., 2025
- AI and Memory Wall — Gholami et al., 2024